- Part Number
SI3911DV-T1-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET 2P-CH 20V 1.8A 6TSOP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SI3911DV-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI3911DV-T1-E3
| Packaging | Cut Tape (CT) | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.8A | |
| Rds On (Max) @ Id, Vgs | 145 mOhm @ 2.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) | |
| Gate Charge (Qg) @ Vgs | 7.5nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 830mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP | |
| Other Names | SI3911DV-T1-E3CT | |
| call me | [email protected] | |
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