Part Number

SI3900DV-T1-E3

Manufacturer

Description
MOSFET 2N-CH 20V 2A 6-TSOP
Category
Discrete Semiconductor Products
Family
FETs - Arrays

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Specifications of SI3900DV-T1-E3
PackagingTape & Reel (TR)
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A
Rds On (Max) @ Id, Vgs125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Other NamesSI3900DV-T1-E3TR
SI3900DVT1E3
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