- Part Number
SI3812DV-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 20V 2A 6-TSOP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SI3812DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI3812DV-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Diode (Isolated) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) | |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) | |
| Gate Charge (Qg) @ Vgs | 4nC @ 4.5V | |
| Input Capacitance (Ciss) @ Vds | - | |
| Power - Max | 830mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP | |
| call me | [email protected] | |
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