- Part Number
SI3475DV-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 200V 0.95A 6-TSOP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SI3475DV-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI3475DV-T1-GE3
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 950mA (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.61 Ohm @ 900mA, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 18nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 500pF @ 50V | |
| Power - Max | 3.2W | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP | |
| Other Names | SI3475DV-T1-GE3CT | |
| call me | [email protected] | |
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