- Part Number
SI3460BDV-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET N-CH 20V 8A 6-TSOP
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of SI3460BDV-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) | |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 5.1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 24nC @ 8V | |
| Input Capacitance (Ciss) @ Vds | 860pF @ 10V | |
| Power - Max | 3.5W | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP | |
| call me | [email protected] | |
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