Part Number

SI2327DS-T1-E3

Manufacturer

Description
MOSFET P-CH 200V 0.38A SOT23-3
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of SI2327DS-T1-E3
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C380mA (Ta)
Rds On (Max) @ Id, Vgs2.35 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) @ Vgs12nC @ 10V
Input Capacitance (Ciss) @ Vds510pF @ 25V
Power - Max750mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Other NamesSI2327DS-T1-E3TR
SI2327DST1E3
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