- Part Number
SI2327DS-T1-E3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET P-CH 200V 0.38A SOT23-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of SI2327DS-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI2327DS-T1-E3
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 200V | |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Ta) | |
| Rds On (Max) @ Id, Vgs | 2.35 Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 12nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 510pF @ 25V | |
| Power - Max | 750mW | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 | |
| Supplier Device Package | SOT-23-3 (TO-236) | |
| Other Names | SI2327DS-T1-E3TR SI2327DST1E3 | |
| call me | [email protected] | |
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