- Part Number
SI1926DL-T1-GE3
- Manufacturer
Vishay/Siliconix
- Description
- MOSFET 2N-CH 60V 0.37A SOT363
- Category
- Discrete Semiconductor Products
- Family
- FETs - Arrays
- To learn about the specification of SI1926DL-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of SI1926DL-T1-GE3
| Packaging | Tape & Reel (TR) | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 370mA | |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 340mA, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 1.4nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 18.5pF @ 30V | |
| Power - Max | 510mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Supplier Device Package | SC-70-3 (SOT323) | |
| call me | [email protected] | |
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