SI1077X-T1-GE3

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Specifications of SI1077X-T1-GE3

Packaging	Tape & Reel (TR)
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	-
Rds On (Max) @ Id, Vgs	78 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) @ Vgs	31.1nC @ 8V
Input Capacitance (Ciss) @ Vds	965pF @ 10V
Power - Max	330mW
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SC-89-6
Other Names	SI1077X-T1-GE3-ND SI1077X-T1-GE3TR
call me	[email protected]

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