- Part Number
RQ3E100GNTB
- Manufacturer
Rohm Semiconductor
- Description
- MOSFET N-CH 30V 10A 8-HSMT
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of RQ3E100GNTB, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of RQ3E100GNTB
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) | |
| Rds On (Max) @ Id, Vgs | 11.7 mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 7.9nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 420pF @ 15V | |
| Power - Max | 2W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-HSMT (3.2x3) | |
| Other Names | RQ3E100GNTBTR | |
| call me | [email protected] | |
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