RN1130MFV(TL3,T)

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Specifications of RN1130MFV(TL3,T)

Packaging	Cut Tape (CT)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	100k
Resistor - Emitter Base (R2) (Ohms)	100k
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	150mW
Mounting Type	Surface Mount
Package / Case	SOT-723
Supplier Device Package	VESM
Other Names	RN1130MFV(TL3T)CT
call me	[email protected]

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