- Part Number
RN1110MFV,L3F
- Manufacturer
Toshiba Semiconductor & Storage
- Description
- TRANS PREBIAS NPN 50V 0.15W VESM
- Category
- Discrete Semiconductor Products
- Family
- Transistors (BJT) - Single, Pre-Biased
- To learn about the specification of RN1110MFV,L3F, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of RN1110MFV,L3F
| Packaging | Tape & Reel (TR) | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Other Names | RN1110MFV,L3F(T RN1110MFVL3F | |
| call me | [email protected] | |
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