RN1106,LF(CT

To learn about the specification of RN1106,LF(CT, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add RN1106,LF(CT with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of RN1106,LF(CT.
We are offering RN1106,LF(CT for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of RN1106,LF(CT

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SC-75, SOT-416
Supplier Device Package	SSM
Other Names	RN1106LF(CT RN1106LF(CT-ND RN1106LF(CTTR
call me	[email protected]

RN1106,LF(CT Related Products

Toshiba Semiconductor & Storage