- Part Number
PMXB360ENEAZ
- Manufacturer
NXP Semiconductors/Freescale Semiconductor, Inc.
- Description
- MOSFET N-CH 80V 1.1A DFN1010D-3
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of PMXB360ENEAZ, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of PMXB360ENEAZ
| Packaging | Tape & Reel (TR) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) | |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 1.1A, 10V | |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 4.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 130pF @ 40V | |
| Power - Max | 400mW | |
| Mounting Type | Surface Mount | |
| Package / Case | 3-XDFN Exposed Pad | |
| Supplier Device Package | DFN1010D-3 | |
| call me | [email protected] | |
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