PDTD123ET,215

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Specifications of PDTD123ET,215

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23 (TO-236AB)
Other Names	568-6440-2 934058977215 PDTD123ET T/R PDTD123ET T/R-ND PDTD123ET,215-ND
call me	[email protected]

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NXP Semiconductors/Freescale Semiconductor, Inc.