PDTD113ZS,126

To learn about the specification of PDTD113ZS,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTD113ZS,126 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of PDTD113ZS,126.
We are offering PDTD113ZS,126 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of PDTD113ZS,126

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Other Names	934059145126 PDTD113ZS AMO PDTD113ZS AMO-ND
call me	[email protected]

PDTD113ZS,126 Related Products

NXP Semiconductors/Freescale Semiconductor, Inc.