PDTD113ES,126

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Specifications of PDTD113ES,126

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Other Names	934059141126 PDTD113ES AMO PDTD113ES AMO-ND
call me	[email protected]

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NXP Semiconductors/Freescale Semiconductor, Inc.