PDTC123JT,215

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Specifications of PDTC123JT,215

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23 (TO-236AB)
Other Names	568-8093-2 934054698215 PDTC123JT T/R PDTC123JT T/R-ND PDTC123JT,215-ND PDTC123JT215
call me	[email protected]

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NXP Semiconductors/Freescale Semiconductor, Inc.