PDTB113ZT,215

To learn about the specification of PDTB113ZT,215, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTB113ZT,215 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of PDTB113ZT,215.
We are offering PDTB113ZT,215 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of PDTB113ZT,215

Packaging	Tape & Reel (TR)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	-
Power - Max	250mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23 (TO-236AB)
Other Names	568-11241-2 934058979215 PDTB113ZT T/R PDTB113ZT T/R-ND PDTB113ZT,215-ND
call me	[email protected]

PDTB113ZT,215 Related Products

NXP Semiconductors/Freescale Semiconductor, Inc.