PDTB113ES,126

To learn about the specification of PDTB113ES,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTB113ES,126 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of PDTB113ES,126.
We are offering PDTB113ES,126 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of PDTB113ES,126

Packaging	Tape & Box (TB)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Other Names	934059144126 PDTB113ES AMO PDTB113ES AMO-ND
call me	[email protected]

PDTB113ES,126 Related Products

NXP Semiconductors/Freescale Semiconductor, Inc.