PDTA123YS,126

To learn about the specification of PDTA123YS,126, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add PDTA123YS,126 with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of PDTA123YS,126.
We are offering PDTA123YS,126 for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of PDTA123YS,126

Packaging	Tape & Box (TB)
Transistor Type	PNP - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	1µA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Other Names	934058781126 PDTA123YS AMO PDTA123YS AMO-ND
call me	[email protected]

PDTA123YS,126 Related Products

NXP Semiconductors/Freescale Semiconductor, Inc.