Part Number

PD20010-E

Manufacturer

Description
TRANS RF N-CH FET POWERSO-10RF
Category
Discrete Semiconductor Products
Family
RF FETs

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Specifications of PD20010-E
PackagingTube
Transistor TypeLDMOS
Frequency2GHz
Gain11dB
Voltage - Test13.6V
Current Rating5A
Noise Figure-
Current - Test150mA
Power - Output10W
Voltage - Rated40V
Package / CasePowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
Supplier Device PackagePowerSO-10RF (Formed Lead)
Other Names497-13044-5
PD20010-E-ND
PD20010E
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