PBRN123ES,126

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Specifications of PBRN123ES,126

Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	800mA
Voltage - Collector Emitter Breakdown (Max)	40V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce	280 @ 300mA, 5V
Vce Saturation (Max) @ Ib, Ic	1.15V @ 8mA, 800mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	700mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Other Names	934059134126 PBRN123ES AMO PBRN123ES AMO-ND
call me	[email protected]

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NXP Semiconductors/Freescale Semiconductor, Inc.