NSVMMUN2230LT1G

To learn about the specification of NSVMMUN2230LT1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSVMMUN2230LT1G with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of NSVMMUN2230LT1G.
We are offering NSVMMUN2230LT1G for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of NSVMMUN2230LT1G

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	246mW
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23-3 (TO-236)
call me	[email protected]

NSVMMUN2230LT1G Related Products

ON Semiconductor