NSBC113EF3T5G

To learn about the specification of NSBC113EF3T5G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NSBC113EF3T5G with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of NSBC113EF3T5G.
We are offering NSBC113EF3T5G for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of NSBC113EF3T5G

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic	250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	254mW
Mounting Type	Surface Mount
Package / Case	SOT-1123
Supplier Device Package	SOT-1123
call me	[email protected]

NSBC113EF3T5G Related Products

ON Semiconductor