NJVMJD112T4G

To learn about the specification of NJVMJD112T4G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add NJVMJD112T4G with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of NJVMJD112T4G.
We are offering NJVMJD112T4G for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of NJVMJD112T4G

Packaging	Tape & Reel (TR)
Transistor Type	NPN - Darlington
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	100V
Vce Saturation (Max) @ Ib, Ic	3V @ 40mA, 4A
Current - Collector Cutoff (Max)	20µA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 2A, 3V
Power - Max	1.75W
Frequency - Transition	25MHz
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	DPAK-3
call me	[email protected]

NJVMJD112T4G Related Products

ON Semiconductor