Part Number

NESG7030M04-A

Manufacturer

Description
DISCRETE RF DIODE
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of NESG7030M04-A
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)4.3V
Frequency - Transition5.8GHz
Noise Figure (dB Typ @ f)0.5dB ~ 0.75dB @ 2GHz ~ 5.8GHz
Gain14dB ~ 21dB
Power - Max125mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 5mA, 2V
Current - Collector (Ic) (Max)30mA
Mounting TypeSurface Mount
Package / CaseSOT-343F
Supplier Device PackageM04
Other NamesNESG7030M04A
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