NE68139-A

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Specifications of NE68139-A

Packaging	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1.2dB @ 1GHz
Gain	13.5dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 8V
Current - Collector (Ic) (Max)	65mA
Mounting Type	Surface Mount
Package / Case	TO-253-4, TO-253AA
Supplier Device Package	SOT-143
call me	[email protected]

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CEL (California Eastern Laboratories)