NE662M04-A

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Specifications of NE662M04-A

Packaging	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	3.3V
Frequency - Transition	25GHz
Noise Figure (dB Typ @ f)	1.1dB @ 2GHz
Gain	18dB
Power - Max	115mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 5mA, 2V
Current - Collector (Ic) (Max)	35mA
Mounting Type	Surface Mount
Package / Case	SOT-343F
Supplier Device Package	SOT-343F
Other Names	NE662M04A
call me	[email protected]

NE662M04-A Related Products

CEL (California Eastern Laboratories)