Part Number

NE58219-T1-A

Manufacturer

Description
TRANSISTOR BIPOLAR .9GHZ 3-SMINI
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of NE58219-T1-A
PackagingCut Tape (CT)
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)12V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)-
Gain-
Power - Max100mW
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 5V
Current - Collector (Ic) (Max)60mA
Mounting TypeSurface Mount
Package / CaseSC-75, SOT-416
Supplier Device Package3-SuperMiniMold (19)
Other NamesNE58219-T1-ACT
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