MURT20010R

To learn about the specification of MURT20010R, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add MURT20010R with quantity into BOM.
Omoelec.com does NOT require any registration to request a quote of MURT20010R.
We are offering MURT20010R for competitive price in the global market, please send us a quote request for pricing. Thank you!

Quick Order

Specifications of MURT20010R

Packaging	Bulk
Diode Configuration	1 Pair Common Anode
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io) (per Diode)	200A (DC)
Voltage - Forward (Vf) (Max) @ If	1.3V @ 100A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	75ns
Current - Reverse Leakage @ Vr	25µA @ 50V
Mounting Type	Chassis Mount
Package / Case	Three Tower
Supplier Device Package	Three Tower
Other Names	MURT20010RGN
call me	[email protected]

MURT20010R Related Products

GeneSiC Semiconductor