Part Number

MS652S

Manufacturer

Description
TRANS RF BIPO 25W 2A M123
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

  • To learn about the specification of MS652S, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
  • To process your RFQ, please add MS652S with quantity into BOM.
  • Omoelec.com does NOT require any registration to request a quote of MS652S.
  • We are offering MS652S for competitive price in the global market, please send us a quote request for pricing. Thank you!
Quick Order
Specifications of MS652S
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)16V
Frequency - Transition450MHz ~ 512MHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max25W
DC Current Gain (hFE) (Min) @ Ic, Vce10 @ 200mA, 5V
Current - Collector (Ic) (Max)2A
Mounting TypeChassis Mount
Package / CaseM123
Supplier Device PackageM123
call me[email protected]