Part Number

MS2212

Manufacturer

Description
TRANS RF BIPO 50W 1.8A M222
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of MS2212
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)55V
Frequency - Transition960MHz ~ 1.215GHz
Noise Figure (dB Typ @ f)-
Gain8.1dB ~ 8.9dB
Power - Max50W
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 500mA, 5V
Current - Collector (Ic) (Max)1.8A
Mounting TypeChassis Mount
Package / CaseM222
Supplier Device PackageM222
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