Part Number

MS2206

Manufacturer

Description
TRANS RF BIPO 7.5W 1A M115
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of MS2206
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)20V
Frequency - Transition1.025GHz ~ 1.15GHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max7.5W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 100mA, 5V
Current - Collector (Ic) (Max)1A
Mounting TypeChassis Mount
Package / CaseM115
Supplier Device PackageM115
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