- Part Number
MJD112-1G
- Manufacturer
ON Semiconductor
- Description
- TRANS NPN DARL 100V 2A IPAK
- Category
- Discrete Semiconductor Products
- Family
- Transistors (BJT) - Single
- To learn about the specification of MJD112-1G, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of MJD112-1G
| Packaging | Tube | |
| Transistor Type | NPN - Darlington | |
| Current - Collector (Ic) (Max) | 2A | |
| Voltage - Collector Emitter Breakdown (Max) | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A | |
| Current - Collector Cutoff (Max) | 20µA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V | |
| Power - Max | 1.75W | |
| Frequency - Transition | 25MHz | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | I-Pak | |
| Other Names | MJD112-1GOS MJD1121G | |
| call me | [email protected] | |
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