Part Number

MJD112-1G

Manufacturer

Description
TRANS NPN DARL 100V 2A IPAK
Category
Discrete Semiconductor Products
Family
Transistors (BJT) - Single

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Specifications of MJD112-1G
PackagingTube
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-Pak
Other NamesMJD112-1GOS
MJD1121G
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