Part Number

MDS150

Manufacturer

Description
TRANS RF BIPO 350W 4A 55AW1
Category
Discrete Semiconductor Products
Family
RF Transistors (BJT)

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Specifications of MDS150
PackagingBulk
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)60V
Frequency - Transition1.03GHz ~ 1.09GHz
Noise Figure (dB Typ @ f)-
Gain10dB
Power - Max350W
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 500mA, 5V
Current - Collector (Ic) (Max)4A
Mounting TypeChassis Mount
Package / Case55AW
Supplier Device Package55AW
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