MDS1100

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Specifications of MDS1100

Packaging	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	65V
Frequency - Transition	1.03GHz
Noise Figure (dB Typ @ f)	-
Gain	8.9dB
Power - Max	8750W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 5A, 5V
Current - Collector (Ic) (Max)	100A
Mounting Type	Surface Mount
Package / Case	55TU-1
Supplier Device Package	55TU-1
call me	[email protected]

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