- Part Number
IXTT10N100D2
- Manufacturer
IXYS Corporation
- Description
- MOSFET N-CH 1000V 10A TO-267
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IXTT10N100D2, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IXTT10N100D2
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Depletion Mode | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 200nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 5320pF @ 25V | |
| Power - Max | 695W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| Supplier Device Package | TO-268 | |
| call me | [email protected] | |
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