- Part Number
IXTQ18N60P
- Manufacturer
IXYS Corporation
- Description
- MOSFET N-CH 600V 18A TO-3P
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IXTQ18N60P
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | |
| Rds On (Max) @ Id, Vgs | 420 mOhm @ 9A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 49nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2500pF @ 25V | |
| Power - Max | 360W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3P | |
| call me | [email protected] | |
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