- Part Number
IXTP1R6N100D2
- Manufacturer
IXYS Corporation
- Description
- MOSFET N-CH 1000V 1.6A TO220AB
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IXTP1R6N100D2
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Depletion Mode | |
| Drain to Source Voltage (Vdss) | 1000V (1kV) | |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 10 Ohm @ 800mA, 0V | |
| Vgs(th) (Max) @ Id | - | |
| Gate Charge (Qg) @ Vgs | 27nC @ 5V | |
| Input Capacitance (Ciss) @ Vds | 645pF @ 25V | |
| Power - Max | 100W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 | |
| Supplier Device Package | TO-220AB | |
| call me | [email protected] | |
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