- Part Number
IXTI10N60P
- Manufacturer
IXYS Corporation
- Description
- MOSFET N-CH 600V 10A I2-PAK
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IXTI10N60P, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IXTI10N60P
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Rds On (Max) @ Id, Vgs | 740 mOhm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 32nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1610pF @ 25V | |
| Power - Max | 200W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | TO-263 | |
| call me | [email protected] | |
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