IXTH68P20T

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Specifications of IXTH68P20T

Packaging	Tube
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Rds On (Max) @ Id, Vgs	55 mOhm @ 34A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) @ Vgs	380nC @ 10V
Input Capacitance (Ciss) @ Vds	33400pF @ 25V
Power - Max	568W
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247 (IXTH)
call me	[email protected]

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