Part Number

IXTH2R4N120P

Manufacturer

Description
MOSFET N-CH 1200V 2.4A TO-247
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IXTH2R4N120P
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C2.4A (Tc)
Rds On (Max) @ Id, Vgs7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) @ Vgs37nC @ 10V
Input Capacitance (Ciss) @ Vds1207pF @ 25V
Power - Max125W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackageTO-247 (IXTH)
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