Part Number

IRLI640G

Manufacturer

Description
MOSFET N-CH 200V 9.9A TO220FP
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IRLI640G
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C9.9A (Tc)
Rds On (Max) @ Id, Vgs180 mOhm @ 5.9A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) @ Vgs66nC @ 10V
Input Capacitance (Ciss) @ Vds1800pF @ 25V
Power - Max40W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220-3
Other Names*IRLI640G
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