Part Number

IRFD110PBF

Manufacturer

Description
MOSFET N-CH 100V 1A 4-DIP
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IRFD110PBF
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Rds On (Max) @ Id, Vgs540 mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs8.3nC @ 10V
Input Capacitance (Ciss) @ Vds180pF @ 25V
Power - Max1.3W
Mounting TypeThrough Hole
Package / Case4-DIP (0.300", 7.62mm)
Supplier Device Package4-DIP, Hexdip, HVMDIP
Other Names*IRFD110PBF
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