Part Number

IPW65R280C6

Manufacturer

Description
MOSFET N-CH 650V 13.8A TO247
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPW65R280C6
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C13.8A (Tc)
Rds On (Max) @ Id, Vgs280 mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id3.5V @ 440µA
Gate Charge (Qg) @ Vgs45nC @ 10V
Input Capacitance (Ciss) @ Vds950pF @ 100V
Power - Max104W
Mounting TypeThrough Hole
Package / CaseTO-247-3
Supplier Device PackagePG-TO247-3
Other NamesIPW65R280C6FKSA1
SP000785060
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