- Part Number
IPW65R190E6
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 650V 20.2A TO247
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
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Specifications of IPW65R190E6
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.3A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 730µA | |
| Gate Charge (Qg) @ Vgs | 73nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1620pF @ 100V | |
| Power - Max | 151W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | PG-TO247-3 | |
| Other Names | IPW65R190E6FKSA1 SP000863906 | |
| call me | [email protected] | |
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