- Part Number
IPS65R1K4C6AKMA1
- Manufacturer
Infineon Technologies
- Description
- MOSFET N-CH 650V 3.2A TO-251
- Category
- Discrete Semiconductor Products
- Family
- FETs - Single
- To learn about the specification of IPS65R1K4C6AKMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
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Specifications of IPS65R1K4C6AKMA1
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 650V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1A, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA | |
| Gate Charge (Qg) @ Vgs | 10.5nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 225pF @ 100V | |
| Power - Max | - | |
| Mounting Type | Through Hole | |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
| Supplier Device Package | PG-TO251-3 | |
| Other Names | SP000991120 | |
| call me | [email protected] | |
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