Part Number

IPP65R600C6

Manufacturer

Description
MOSFET N-CH 650V 7.3A TO220
Category
Discrete Semiconductor Products
Family
FETs - Single

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Specifications of IPP65R600C6
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C7.3A (Tc)
Rds On (Max) @ Id, Vgs600 mOhm @ 2.1A, 10V
Vgs(th) (Max) @ Id3.5V @ 210µA
Gate Charge (Qg) @ Vgs23nC @ 10V
Input Capacitance (Ciss) @ Vds440pF @ 100V
Power - Max63W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220-3
Other NamesIPP65R600C6XKSA1
SP000661310
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