IPP03N03LB G

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Specifications of IPP03N03LB G

Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Rds On (Max) @ Id, Vgs	3.1 mOhm @ 55A, 10V
Vgs(th) (Max) @ Id	2V @ 100µA
Gate Charge (Qg) @ Vgs	59nC @ 5V
Input Capacitance (Ciss) @ Vds	7624pF @ 15V
Power - Max	150W
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	PG-TO220-3-1
Other Names	IPP03N03LB G-ND IPP03N03LBGIN IPP03N03LBGX IPP03N03LBGXK SP000074721 SP000680786
call me	[email protected]

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