IPP023N04N G

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Specifications of IPP023N04N G

Packaging	Tube
FET Type	MOSFET N-Channel, Metal Oxide
FET Feature	Standard
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Rds On (Max) @ Id, Vgs	2.3 mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 95µA
Gate Charge (Qg) @ Vgs	120nC @ 10V
Input Capacitance (Ciss) @ Vds	10000pF @ 20V
Power - Max	167W
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	TO-220-3
Other Names	IPP023N04NGBKSA1 IPP023N04NGXKSA1 SP000359167 SP000680762
call me	[email protected]

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